All CO2-processed 157-nm fluoropolymer-containing photoresist systems

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 327-334

  McAdams, Christopher L ^a,b   Flowers, Devin ^a   Hoggan, Erik N ^c   Carbonell, Ruben G ^b,c   DeSimone, Joseph M ^a,b,c  

^a University of North Carolina at Chapel Hill   (United States)

^b Micell Integrated Systems   (United States)

^c North Carolina State University   (United States)

Author keywords

Dry processing; Environmentally friendly solvent; Image collapse; Liquid CO2 157 nm photoresist; Non aqueous developer

Indexed keywords

CARBON DIOXIDE; ETCHING; FLUORINE CONTAINING POLYMERS; IMAGE ANALYSIS; ORGANIC SOLVENTS; SEMICONDUCTOR DEVICE MANUFACTURE; STRIPPING (REMOVAL); SURFACE TENSION; THIN FILMS; VISCOSITY; WETTING;

IMAGE COLLAPSE;

PHOTORESISTS;

EID: 0034772990     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436835     Document Type: Article

References (16)

1. Chemical amplification in the design of polymers for resist applications
2. Chemical amplification in the design of dry developing resist materials
3. Progress in 193 nm positive resists
4. Protecting groups for 193-nm photoresists
5. Outlook for 157 nm resist design
6. 157 nm resist materials: A progress report
7. Challenges in materials design for 157 nm photoresists
8. Synthesis of fluoropolymers in supercritical carbon dioxide
9. Waves in a thin liquid layer on a rotating disk