Inter- and intramembrane resist critical dimension uniformity across a SCALPEL mask

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3242-3247

  Nordquist, K ^a   Ainley, E ^a   Resnick, D J ^a   Weisbrod, E ^b   Martin, C ^b   Engelstad, R ^b   Masnyj, Z ^a   Mangat, P ^a  

^a MOTOROLA INC   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT MANUFACTURE; MASKS; PHOTORESISTS; SENSITIVITY ANALYSIS; THERMAL GRADIENTS; THERMOANALYSIS;

CHEMICALLY AMPLIFIED (CA) RESISTS; POSTEXPOSURE BAKE (PEB) SENSITIVITIES;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034316462     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1324642     Document Type: Article

References (7)

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