메뉴 건너뛰기




Volumn 122, Issue 14, 2000, Pages 3422-3435

Mechanistic studies of CVD metallization processes: Reactions of rhodium and platinum β-diketonate complexes on copper surfaces

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; PLATINUM COMPLEX; RHODIUM COMPLEX;

EID: 0034639918     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja993653s     Document Type: Article
Times cited : (29)

References (50)
  • 1
    • 0004004688 scopus 로고
    • Kodas, T. T., Hampden-Smith. M. J. Eds. VCH: New York, and references therein
    • Kodas, T. T., Hampden-Smith. M. J. Eds. The Chemistry of Metal CVD; VCH: New York, 1994 and references therein.
    • (1994) The Chemistry of Metal CVD
  • 3
    • 0003494870 scopus 로고
    • Vossen, J. L., Kern, W., Eds.; Academic: Boston. Chapter III-1
    • Jensen, K. F.; Kern W. In Thin Film Processes II: Vossen, J. L., Kern, W., Eds.; Academic: Boston. 1991; Chapter III-1.
    • (1991) Thin Film Processes , vol.2
    • Jensen, K.F.1    Kern, W.2
  • 4
  • 25
    • 33646330964 scopus 로고    scopus 로고
    • Lin, W.: Warren. T. H.; Wilson. S. R.; Girolami. G. S., submitted for publication
    • Lin, W.: Warren. T. H.; Wilson. S. R.; Girolami. G. S., submitted for publication.
  • 26
    • 33646297410 scopus 로고    scopus 로고
    • Lin. W.; Girolami, G. S., in preparation
    • Lin. W.; Girolami, G. S., in preparation.
  • 27
    • 33646293058 scopus 로고    scopus 로고
    • You, Y ; Girolami, G. S., in preparation
    • You, Y ; Girolami, G. S., in preparation.
  • 36
    • 0342778780 scopus 로고
    • Redhead, P. A. Vacuum 1962, 12, 203-211.
    • (1962) Vacuum , vol.12 , pp. 203-211
    • Redhead, P.A.1
  • 45
    • 33646274032 scopus 로고    scopus 로고
    • 5/2) peak must be used to gauge the oxidation state of platinum
    • 5/2) peak must be used to gauge the oxidation state of platinum.
  • 47
    • 0028483167 scopus 로고
    • A similar redox transmetalation reaction is used to deposit tungsten on silicon: WF6 reacts with the Si substrate to afford W and SiF4
    • A similar redox transmetalation reaction is used to deposit tungsten on silicon: WF6 reacts with the Si substrate to afford W and SiF4. Wang. J.-T.; Cao, C.-B.; Wang, H.: Zhang. S.-L. J. Electrochem. Soc. 1994, 141, 2192-2198.
    • (1994) J. Electrochem. Soc. , vol.141 , pp. 2192-2198
    • Wang, J.-T.1    Cao, C.-B.2    Wang, H.3    Zhang, S.-L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.