SCOPUS 정보 검색 플랫폼

Volumn 15, Issue 12, 2000, Pages 2822-2829

Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors

(10) Hong, Suk Kyoung a Yoon, Yang Han b Baek, Yong Ku a Lee, Chang Goo a Suh, Chung Won a Lee, Seok Won a Kang, Young Min a Kang, Nam Soo a Hwang, Cheol Seong c Kwon, Oh Seong c

a FeRAM Technology (South Korea)

b Process Development Thin Film (South Korea)

c Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; CAPACITORS; DEGRADATION; DIELECTRIC MATERIALS; DIFFUSION IN GASES; FERROELECTRICITY; METALLIZING; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SPIN GLASS; STRONTIUM COMPOUNDS; WSI CIRCUITS;

INTERMETAL DIELECTRIC (IMD) PROCESS;

DATA STORAGE EQUIPMENT;

EID: 0034582744 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2000.0403 Document Type: Article

Times cited : (6)

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