On the optimum thickness to test dielectric reliability, in an integrated technology of power devices

Microelectronics Reliability

Volumn 40, Issue 12, 2000, Pages 2047-2051

  Oussalah, Slimane ^a   Nebel, Fabien ^a   Jérisian, Robert ^a  

^a UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; FAILURE ANALYSIS; POWER ELECTRONICS;

TIME DEPENDENT DIELECTRIC BREAKDOWNS (TDDB);

INTEGRATED CIRCUIT LAYOUT;

EID: 0034559431     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00074-3     Document Type: Article

References (21)

1. 2. International Reliability Physics Symposium, IRPS 85, 1985. p. 24-31.
2. Lee JC, Chen IC, Hu C. Modeling and characterization of gate oxide reliability. IEEE Trans Electron Dev 1988; 35:2268-78.
3. Moazzami R, Lee JC, Chen IC, Hu C. Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown. International Electron Devices Meeting, IEDM 88, San Francisco, December 1988:710-3.
4. Moazzami R, Hu C. Projecting gate oxide reliability and optimizing reliability screens. IEEE Trans on Electron Dev 1990;37:1643-50.
5. Degreave R, Ogier JL, Bellens R, Roussel PJ, Groeseneken G, Maes HE. A new model for the field dependence of intrinsic and extrinsic time-dependent-dielectric-breakdown. IEEE Trans Electron Dev 1998;45:472-81.
6. Crook DL. Method of determining reliability screens for time dependent dielectric breakdown. Proceedings of 17th International Reliability Physics Symposium, IRPS 79, 1979. p. 1-7.
7. Berman B. Time-zero dielectric reliability test by a ramp method. International Reliability Physics Symposium, IRPS 81, 1981. p. 204.
8. McPherson JW, Baglee DA. Acceleration factors for thin gate oxide stressing. Proceedings of 23rd International Reliability Physics Symposium 1985, IRPS 85, 1985. p. 1-5.
9. Kimura M. Oxide breakdown mechanism and quantum physical chemistry for time-dependent dielectric break-down. Proceedings of 35th International Reliability Physics Symposium, IRPS 97, April 1997. p. 190-200.
10. 2 under long-term/ low-field test conditions. International Electron Devices Meeting, IEDM 98, December 1998. p. 171-4.
11. Schlund B, Messick C, Suehle JS, Charpala P. A new physics-based model for time-dependent-dielectric-breakdown. Proceedings of 34th International Reliability Physics Symposium, IRPS 96, April/May 1996. p. 84-92.
12. 2 films under static and dynamic stress. IEEE Trans Electron Dev 1997;44:801-8.
13. Kimura M. Field and temperature acceleration model for time-dependent dielectric breakdown. IEEE Trans Electron Dev 1999;46:220-9.
14. 2 thin films and their impact on time-dependent dielectric breakdown. Proceedings of 36th International Reliability Physics Symposium, IRPS 98, Reno, NV, March/April 1998. p. 47-56.
15. Nigam T, Degraeve R, Groeseneken G, Heyns MM, Maes HE. Constant current charge-to-breakdown: still a valid tool to study the reliability of MOS structures? Proceedings of 36th International Reliability Physics Symposium, IRPS 98, Reno, NV, March/April 1998. p. 62-9.
16. 2 films. IEEE Trans Electron Dev 1985;2:423-8.
17. Oussalah S, Nebel F. On the oxide thickness dependence of the time-dependent-dielectric-breakdown. Proceedings of International Hong Kong Electron Devices Meeting, IHKEDM 99, Hong Kong, June 1999. p. 42-5.
18. Kuo W, Chien WTK, Kim T. Reliability, Yield, and Stress Burn. First edition. Boston: Kluwer Academic Publishers, 1998.
19. Degraeve R. Thesis, Catholic University of Louvain Belgium, May 1998.
20. Dimaria DJ, Cartier E, Arnold D. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon. J Appl Phys 1993;73:3367-84.
21. Degraeve R, Groeseneken G, Bellens R, Depas M, Maes HE. International Electron Devices Meeting, IEDM 95, December 1995. p. 863-6.