On the oxide thickness dependence of the time-dependent-dielectric-breakdown

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 1999, Pages 42-45

  Oussalah, S ^a   Nebel, F ^a  

^a UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; MOS DEVICES; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; WEIBULL DISTRIBUTION;

OXIDE THICKNESS DEPENDENCE; SOFTWARE PACKAGE LABVIEW; TIME DEPENDENT DIELECTRIC BREAKDOWN;

THIN FILMS;

EID: 0033295872     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)