Impact of high energy ion implantation on dopant distribution in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 146, Issue 1-4, 1998, Pages 323-328

  Neustroev, E P ^b   Antonova, I V ^a   Obodnikov, V I ^a   Popov, V P ^a   Skuratov, V A ^c   Smagulova, S A ^b   Didyk, A Yu ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

High energy ion implantation; Impurity distribution; Shallow p n junction; Silicon

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; CRYSTALS; ELECTRON ENERGY LEVELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

ELECTRONIC STOPPING; HIGH ENERGY ION IMPLANTATION; IMPURITY DISTRIBUTION; SHALLOW P N JUNCTION;

ION IMPLANTATION;

EID: 0032477012     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00471-6     Document Type: Article

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