Donor center formation in hydrogen implanted silicon

Physica B: Condensed Matter

Volumn 270, Issue 1-2, 1999, Pages 1-5

  Neustroev, E P ^a   Antonova, I V ^b   Stas, V F ^b   Popov, V P ^b   Obodnikov, V I ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; HYDROGEN; ION IMPLANTATION; POINT DEFECTS; TEMPERATURE;

DONOR CENTER FORMATION; THERMAL DONOR;

SILICON;

EID: 0033212262     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00168-4     Document Type: Article

References (13)

1. Bruel M., Aspar B., Maleville C., Moriceau H., Auberton-Herve A.J., Barge T. Electrochim. Soc. Proc. 3:1997;97-123.
2. Bruel M. Nucl. Instr. and Meth. B. 108:1996;313.
3. Hara T., Kakizaki Y., Kihana T., Oshima S., Kitamura T. J. Electrochem. Soc. 144:1997;L78.
4. Bruni M., Bisero D., Tonini R., Ottaviani G., Queirolo G., Bottini R. Phys. Rev. B. 49:1994;5291.
5. Job R., Fahrner W.R., Ulyashin A.G., Bumay Yu.A., Ivanov A.I., Palmetshofer L. Solid State Phenomena. 91:1997;57-58.
6. Stain H.J., Hahn S. J. Electrochem. Soc. 142:1995;1242.
7. Lamp C.D., James D.J. Appl. Phys. Lett. 62:1993;2081.
8. Tokuda Y., Ito A., Ohshima H. Semikond. Sci. Technol. 13:1998;194.
9. Perton S.J., Corbett J.W., Shi T.S. Appl. Phys. A. 43:1987;153.
10. G.D. Watkins, in: Radiation Effects in Semiconductors, Conf. Ser. N31, Inst. of Phys., London-Bristol, 1977, p. 221.
11. Leary P., Jones R., Oberg S. Phys. Rev. B. 57:1998;3887.
12. R. Jones, S. Oberg, A. Umerski, Materials Science Forum Vol. 83-87 (Trans.Tech.Publications, Switzerland, 1992) (1992) 551.
13. Griffioen C.C., Evans J.H., De Jong P.C., VanVeen A. Nucl. Instr. and Meth. B. 27:1987;417.