Fabrication of twin nano silicon wires based on arsenic dopant effect

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1591-1593

  Tang, Xiaohui ^a   Baie, Xavier ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Dopant effect; Nano wires; Oxidation rate; Single electron memory; SOI wafer

Indexed keywords

EID: 0000062702     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1591     Document Type: Article

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