Comparison of passive and active pixel schemes for CMOS visible imagers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3360, Issue , 1998, Pages 101-110

  Kozlowski, L J ^a   Luo, J ^a   Kleinhans, W E ^a   Liu, T ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

APS; CCD; CMOS; Passive pixel

Indexed keywords

BANDPASS FILTERS; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; IMAGE SENSORS; INTEGRATED OPTOELECTRONICS; LITHOGRAPHY; MICROLENSES; MOSFET DEVICES; OPTICAL FILTERS; PHOTODIODES; SIGNAL TO NOISE RATIO; SILICON WAFERS;

ACTIVE PIXEL SENSOR; INFRARED IMAGERS; PASSIVE PIXEL SENSOR; VISIBLE IMAGER;

INFRARED IMAGING;

EID: 0032403331     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (27)

1. Integrated arrays of silicon photodetectors for image sensing
2. MOS electronics for a portable reading aid for the blind
3. MOS area sensor: Part I - Design consideration of an n-p-n structure 484 × 384 element CMOS imager
4. MOS area sensor: Part II - Low-noise area sensor with antiblooming photodiodes
5. EG&G reticon sales catalog
6. Design consideration and performance of a new MOS imaging device
7. Chapter 25: Infrared detector arrays
8. A novel bipolar imaging device with self-noise-reduction capability
9. Storage mode operation of a phototransistor and its adaptation to integrated arrays for image detection
10. A low-noise Bi-CMOS linear imager sensor with auto-focusing function
11. 310k pixel bipolar imager (BASIS)
12. EG&G reticon catalog
13. Performance comparison of input circuits for high density LWIR focal plane arrays
14. 256 × 256 HgCdTe focal plane array for the hubble space telescope
15. 2 FPA for infrared astronomy: Development status
16. Low-noise performance and dark current measurements on the 256 × 256 NICMOS3 FPA
17. Low noise capacitive transimpedance amplifier performance vs. alternative IR detector interface schemes in submicron CMOS