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Volumn 8, Issue 6, 2000, Pages 717-723

Intrinsic leakage in deep submicron CMOS ICs - measurement-based test solutions

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC POWER SUPPLIES TO APPARATUS; HETEROJUNCTIONS; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; SEMICONDUCTOR DIODES; THRESHOLD VOLTAGE;

EID: 0034459843     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/92.902266     Document Type: Article
Times cited : (35)

References (21)
  • 3
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    • Identifying defects in deep submicron CMOS
    • Sept.
    • J. M. Soden, C. F. Hawkins, and A. C. Miller, "Identifying defects in deep submicron CMOS," IEEE Spectr., pp. 66-71, Sept. 1996.
    • (1996) IEEE Spectr. , pp. 66-71
    • Soden, J.M.1    Hawkins, C.F.2    Miller, A.C.3
  • 7
    • 0028466732 scopus 로고
    • Scaling of MOS technology to submicrometer feature sizes
    • C. Mead, "Scaling of MOS technology to submicrometer feature sizes," Analog Integr. Circuits Signal Process., vol. 6, pp. 9-25, 1994.
    • (1994) Analog Integr. Circuits Signal Process. , vol.6 , pp. 9-25
    • Mead, C.1
  • 8
    • 0016116644 scopus 로고
    • Design of ion-implanted MOSFET's with very small physical dimensions
    • Oct.
    • R. H. Dennard, et al., "Design of ion-implanted MOSFET's with very small physical dimensions," IEEE J. Solid-State Circuits, p. 256, Oct. 1974.
    • (1974) IEEE J. Solid-State Circuits , pp. 256
    • Dennard, R.H.1
  • 13
    • 0028754969 scopus 로고
    • A high performance 0.35 μm logic technology for 3.3 V and 2.5 V operation
    • Dec.
    • M. Bohr, et al., "A high performance 0.35 μm logic technology for 3.3 V and 2.5 V operation," in IEDM Tech. Dig., Dec. 1994, p. 273.
    • (1994) IEDM Tech. Dig. , pp. 273
    • Bohr, M.1
  • 14
    • 0031382110 scopus 로고    scopus 로고
    • Intrinsic leakage in low power deep submicron CMOS ICs
    • Nov.
    • A. Keshavarzi, K. Roy, and C. F. Hawkins, "Intrinsic leakage in low power deep submicron CMOS ICs," in Int. Test Conf., Nov. 1997, pp. 146-155.
    • (1997) Int. Test Conf. , pp. 146-155
    • Keshavarzi, A.1    Roy, K.2    Hawkins, C.F.3
  • 16
    • 0030383519 scopus 로고    scopus 로고
    • A high performance 0.25 μm logic technology optimized for 1.8 V operation
    • Dec.
    • M. Bohr, et al., "A high performance 0.25 μm logic technology optimized for 1.8 V operation," in IEDM Tech. Dig., Dec. 1996, pp. 847-851.
    • (1996) IEDM Tech. Dig. , pp. 847-851
    • Bohr, M.1
  • 17
    • 0028730614 scopus 로고
    • Anomalous narrow channel effect in trench-isolated buried-channel p-MOSFET's
    • Dec.
    • J. A. Mandelman and J. Alsmeier, "Anomalous narrow channel effect in trench-isolated buried-channel p-MOSFET's," IEEE Electron Device Lett., vol. 15, no. 12, Dec. 1994.
    • (1994) IEEE Electron Device Lett. , vol.15 , Issue.12
    • Mandelman, J.A.1    Alsmeier, J.2
  • 19
    • 0031340072 scopus 로고    scopus 로고
    • So, what is an optimal test mix? A discussion of the sematech methods experiment
    • Nov.
    • P. Nigh, W. Needham, K. Butler, P. Maxwell, R. Aitken, and W. Maly, "So, what is an optimal test mix? A discussion of the sematech methods experiment," in Int. Test Conf., Nov. 1997.
    • Int. Test Conf. , vol.1997
    • Nigh, P.1    Needham, W.2    Butler, K.3    Maxwell, P.4    Aitken, R.5    Maly, W.6
  • 21
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    • DDQ diagnostic and fault simulation software
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    • DDQ diagnostic and fault simulation software," in Int. Test Conf., Nov. 1997.
    • (1997) Int. Test Conf.
    • Nigh, P.1    Forlenza, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.