Identifying defects in deep-submicron CMOS ICs

IEEE Spectrum

Volumn 33, Issue 9, 1996, Pages 66-71

  Soden, Jerry M ^a   Hawkins, Charles F ^a   Miller, Anthony C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT IN CURRENT SENSORS; CHANNEL DOPING ENGINEERING; DEEP SUBMICRON CIRCUITS; DEFECT DETECTION; LOW QUIESCENT POWER SUPPLY CURRENT; MANUFACTURING DEFECTS; THRESHOLD VOLTAGE; WEAK INVERSION MODEL EQUATIONS;

DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC FIELDS; FAILURE ANALYSIS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; LOGIC CIRCUITS; TRANSISTORS; VOLTAGE MEASUREMENT;

CMOS INTEGRATED CIRCUITS;

EID: 0030241924     PISSN: 00189235     EISSN: None     Source Type: Journal    
DOI: 10.1109/6.535396     Document Type: Article

References (0)