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Integrated Ferroelectrics

Volumn 31, Issue 1-4, 2000, Pages 297-304

Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

(5) Choi, E S a Shin, W C a Suh, T S a Park, S S a Yoon, S G a

a Chungnam National University (South Korea)

Author keywords

MOCVD; Pt Ru poly Si electrode structure; Specific contact resistance; Step coverage

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PERMITTIVITY; PLATINUM; POLYSILICON; RUTHENIUM; SURFACE STRUCTURE;

DYNAMIC RANDOM ACCESS MEMORY CAPACITOR; ELECTRODE STRUCTURES; POLYCRYSTALLINE SILICON; SPECIFIC CONTACT RESISTANCE; SURFACE MICROSTRUCTURE;

ELECTRODES;

EID: 0034447444 PISSN: 10584587 EISSN: None Source Type: Journal
DOI: 10.1080/10584580008215662 Document Type: Conference Paper

Times cited : (2)

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