Low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 117-120

  Sokolich, M ^a   Docter, D P ^a   Brown, Y K ^a   Kramer, A R ^a   Jensen, J F ^a   Stanchina, W E ^a   Thomas III, S ^a   Fields, C H ^a   Ahmari, D A ^a   Lui, M ^a   Martinez, R ^a   Duvall, J ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FLIP FLOP CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

STATIC DIVIDERS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0032310078     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)