W-band MMIC VCO with a large tuning range using a pseudomorphic HFET

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 525-528

  Bangert, A ^a   Schlechtweg, M ^a   Lang, M ^a   Haydl, W ^a   Bronner, W ^a   Fink, T ^a   Koehler, K ^a   Raynor, B ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER AMPLIFIERS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OHMIC CONTACTS; PERFORMANCE; PRODUCT DESIGN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; TUNING;

CENTER FREQUENCY; ELECTRICAL TUNING RANGE; MECHANICAL TUNING RANGE; NOISE PERFORMANCE; PSEUDOMORPHIC HETEROJUNCTION FIELD EFFECT TRANSISTORS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0029696994     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)