Chemically-amplified negative resist optimized for high-resolution X-ray lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3678, Issue I, 1999, Pages 455-462

  Nakamura, Jiro ^a   Kawai, Yoshio ^a   Deguchi, Kimiyoshi ^a   Oda, Masatoshi ^a   Matsuda, Tadahito ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

KETONES; POLYMERS; X RAY LITHOGRAPHY;

CHEMICALLY-AMPLIFIED NEGATIVE RESISTS; PHOTOACID GENERATORS (PAG);

PHOTORESISTS;

EID: 0032651669     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.350228     Document Type: Conference Paper

References (8)