Effect of etchant composition on film structure during laser-assisted porous Si growth

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 87-91

  Wellner, A ^a   Koker, L ^a   Kolasinski, K W ^a   Aindow, M ^a   Palmer, R E ^a  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DEPOSITION; ETCHING; HIGH INTENSITY LIGHT; LASER APPLICATIONS; PORE SIZE; POROUS MATERIALS; POSITIVE IONS; SILICON; SOLUTIONS; SURFACE STRUCTURE;

AQUEOUS FLUORIDE SOLUTION; ETCHANT COMPOSITION; HEXAFLUOROSILICATE; LASER ASSISTED POROUS SILICON GROWTH; POROUS SILICON FILM;

DIELECTRIC FILMS;

EID: 0034429006     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<87::AID-PSSA87>3.0.CO;2-N     Document Type: Article

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