Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 1996, Pages 211-215

  Biber, Charlotte ^a   Morf, Thomas ^a   Benedickter, Hansruedi ^a   Lott, Urs ^a   Bachtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

EQUIVALENT CIRCUIT MODEL; GATE RESISTANCE; MICROWAVE FREQUENCY MEASUREMENT; PARASITIC CAPACITANCES; SILICON EPIWAFER; TEST STRUCTURES;

MOSFET DEVICES;

EID: 0029717448     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)