A Nonlinear Microwave MOSFET Model for Spice Simulators

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 604-610

  Biber, Charlotte E ^a   Schmatz, Martin L ^a   Morf, Thomas ^a   Lott, Urs ^a   Bächtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

CMOS FR; High frequency; Microwave modeling; Modeling; MOSFET; Silicon; SPICE

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HIGH FREQUENCY AMPLIFIERS; INTERMODULATION; MICROWAVE INTEGRATED CIRCUITS; NONLINEAR NETWORK ANALYSIS; NONLINEAR NETWORKS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

SOFTWARE PACKAGE SPICE;

MOSFET DEVICES;

EID: 0032074135     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668670     Document Type: Article

References (15)

1. N. Camilleri étal., "Silicon MOSFET's, the microwave device technology for the 90's," in IEEE MTTS Int. Microwave Symp. Dig., vol. 2, Atlanta, GA, June 1993, pp. 545-548.
2. P. Vandeloo and W. Sansen, "Modeling of the MOS transistor for high frequency analog design," IEEE Trans. Computer-Aided Design, vol. 8, pp. 713-723, July 1989.
3. B. J. Scheu, "MOS transistor modeling and characterization for circuit simulation," Electron. Res. Lab., Univ. California, Berkeley, Rep. ERLM85/85, 1985.
4. C. C. Enz et al., "An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications," Special Issue Analog Integrated Circuits Syst. Processing J. Low-Voltage Low-Power Circuits, July 1995.
5. M. Bucher et al, "An efficient parameter extraction methodology for the EKV MOST model," in Proc. IEEE Int. Conf. Microelectronic Test Structures, vol. 9, Trento, Italy, Mar. 1996, pp. 145-150.
6. H. Cho and D. E. Burk, "A three step method for the de-embedding of high frequency 5-parameter measurements," IEEE Trans. Electron Devices, vol. 38, pp. 1371-1375, June 1991.
7. D. Lovelace etal. "Extracting small signal model parameters of silicon MOSFET transistors," in IEEE MTTS Int. Microwave Symp. Dig., San Diego, CA, June 1994, vol. 2, pp. 865-868.
8. C. Biber et al., "Microwave frequency measurements and modeling of MOSFET's on low resistivity silicon substrates," in Proc. IEEE Int. Conf. Microelectronic Test Structures, vol. 9, Trento, Italy, Mar. 1996, pp. 211-215.
9. C. Camacho-Penalosa and C. S. Aitchison, "Modeling frequency dependence of output impedance of a microwave MESFET at low frequencies," Electron. Lett., vol. 21, no. 12, pp. 528-529, June 6, 1985.
10. U. Lott, "Sensitivity analysis of the millimeter-wave HEMT performance parameters ff and /MAX to errors in the equivalent circuit elements," in IEEE MTTS Int. Microwave Symp. Dig., San Diego, CA, June 1994, pp. 857-860.
11. C. E. Biber et al, "Improvements on a MOSFET model for nonlinear RF simulations," in IEEE MTTS Int. Microwave Symp. Dig., vol. 2, Denver, CO, June 1997, pp. 865-868.
12. H. Statz et ai "GaAs FET device and circuit simulation in SPICE," IEEE Trans. Electron Devices, vol. ED34, pp. 160-169, Feb. 1987.
13. M. L. Schmatz et al "Novel design topology for ultra low power down converters with broad-band on chip matching network," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2946-2951, Dec. 1995.
14. K. R. Laker and W. M. C. Sansen, Design of Analog Integrated Circuits and Systems. New York: McGraw-Hill, 1994.
15. C. Biber étal, "High frequency measurements and modeling of silicon MOSFET's and on-chip interconnections," in Proc. Workshop German IEEE Joint MTT/AP Chapter: Silicon-Based High-Frequency Devices Circuits, Guenzburg, Germany, Nov. 1994, pp. 104-110.