Effect of crystallographic directions on porous silicon formation on patterned substrates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 43-47

  Guendouz, M ^a   Joubert, P ^a   Sarret, M ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTALLOGRAPHY; ETCHING; MASKS; POROUS SILICON; REACTION KINETICS; SEMICONDUCTOR GROWTH; SUBSTRATES;

ELECTROCHEMICAL ANODIZATIONS; MASK PATTERNS;

SEMICONDUCTING SILICON;

EID: 0033904538     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00263-9     Document Type: Article

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