Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4412, Issue , 2001, Pages 299-303

  Podor B ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Gallium nitride (GaN); Mg acceptors; Thermal ionization energy

Indexed keywords

CHEMICAL ANALYSIS; ELECTRON ENERGY LEVELS; ELECTROSTATICS; GALLIUM NITRIDE; HALL EFFECT; IMPURITIES; IONIZATION; MAGNESIUM PRINTING PLATES; MATHEMATICAL MODELS; THERMAL EFFECTS; THERMAL VARIABLES MEASUREMENT;

ELECTROSTATIC INTERACTION MODEL; HALL EFFECT MEASUREMENTS; MAGNESIUM ACCEPTORS; OPTICAL IONIZATION ENERGIES; THERMAL IONIZATION ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034425634     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435848     Document Type: Conference Paper

References (29)

1. GaN, AlN, and InN: A review
2. Progress and prospects for GaN and the III-V nitride semiconductors
3. Group III-nitride semiconductors for short wavelength light emitting diodes
4. GaN: Processing, defects, and devices
5. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
6. Thermal annealing effects on p-type Mg-doped GaN films
7. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
8. 1-yN heterostructures for short wavelength light emitter
9. Electrical properties of the silicon and silicon alloys containing boron and phosphorus
10. Electrical properties of n-type germanium
11. On the concentration dependence of the thermal impurity-to-band activation energies in semiconductors
12. On the concentration dependence of the thermal ionization energy of impurities in InP
13. On the concentration dependence of the thermal ionization energy of impurities in semiconductors
14. 1-xAs:Ge (x≤0.40)
15. Level of percolation in weakly doped semiconductors
16. On the effect of random field on thermal energy of ionization in lightly doped semiconductors
17. 0.92N grown by metalorganic vapor phase epitaxy
18. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
19. Electrical transport properties of p-GaN
20. Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
21. Shallow and deep level defects in GaN
22. New dopant precursors for n-type and p-type GaN
23. On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy
24. Electrical and ESR studies of GaN layers grown by metal organic chemical vapour deposition
25. Thermopower investigation on n- and p-type GaN
26. Heavy doping effects in Mg-doped GaN
27. Electrical properties of n-type and p-type InP grown by the synthesis, solute diffusion technique