Direct measurements of heterobarrier leakage current and modal gain in 2.3μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Electronics Letters

Volumn 35, Issue 4, 1999, Pages 298-299

  Donetsky, D V ^a   Belenky, G L ^a   Garbuzov, D Z ^b   Lee, H ^b   Martinelli, R U ^b   Taylor, G ^b   Luryi, S ^a   Connolly, J C ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033076312     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990242     Document Type: Article

References (5)

1. GARBUZOV, D.Z., MARTINELLI, R.U., LEE, H., YORK, P.K., MENNA, R.J., CONNOLY, J.C., and NARAYAN, S.Y.: 'Ultralow-loss broadened-wavequide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers', Appl. Phys. Lett., 1996, 69, (14), pp. 2006-2008
2. BELENKY, G.L., KAZARINOV, R.F., LOPATA, J., LURYI, S., TANBUN-EK, T., and GARBINSKI, P.A.: 'Direct measurements of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures', IEEE Trans., 1995, 42, (2), pp. 215-218
3. GARBUZOV, D.Z., LEE, R., KHALFIN, V., DIMARCO, L., MARTINELLI, R., MENNA, R., and CONNOLLY, J.C.: '2.3-2.6 μm CW high-power room temperature broaden waveguide SCH-QW InGaAsSb/AlGaAsSb diode lasers'. CLEO-98, San Francisco, May 1998 (Postdeadline papers)
4. HAKKI, B.W., and PAOLI, T.L.: 'CW degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain', J. Appl. Phys., 1973, 44, pp. 4113-4119
5. ACKERMAN, D.A., SHTENGEL, G.E., HYBERTSEN, M.S., MORTON, P.A., KAZARINOV, R.F., TANBUN-EK, T., and LOGAN, R.A.: 'Analysis of gain in determining of To in 1.3 μm semiconductor lasers', IEEE J. Sel. Topics Quantum Electron., 1995, 1, (2), pp. 250-263