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Chinese Physics Letters

Volumn 17, Issue 8, 2000, Pages 592-594

Preparation and characterization of InAs/Si composite film

(4) Yang, Lin a Li, Guang Hai a Zheng, Mao Jun a Zhang, Li De a

a INSTITUTE OF SOLID STATE PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; FILM PREPARATION; III-V SEMICONDUCTORS; NANOCOMPOSITE FILMS; PARTICLE SIZE; SILICON COMPOUNDS; SUBLIMATION; THIN FILMS; X RAY DIFFRACTION;

AMORPHOUS SI; ANNEALING TEMPERATURES; COMPOSITE THIN FILMS; DEEP-LEVELS; PARTICLES SIZES; RADIO-FREQUENCY CO-SPUTTERING; SI MATRIX; STOICHIOMETRIC RATIO; X-RAY DIFFRACTION SPECTRUM;

INDIUM ARSENIDE;

EID: 0034376764 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/17/8/017 Document Type: Article

Times cited : (3)

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