Optical absorption properties of indium-doped thin crystalline silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5609-5613

  Kasai, Hiroto ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Absorption coefficient; Crystalline silicon; Impurity; Impurity photovoltaic effect; Indium; Solar cell; Thin films

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; INDIUM; LIGHT ABSORPTION; PHOTONS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON SOLAR CELLS; THIN FILMS;

ABSORPTION COEFFICIENT;

OPTICAL FILMS;

EID: 0032182201     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5609     Document Type: Article

References (30)

1. G. Gütter and H. J. Queisser: Energy Conversion 10 (1970) 51.
2. J. S. Blakemore: Can. J. Phys. 34 (1956) 938.
3. H. Matsumura and H. Kasai: Jpn. J. Appl. Phys. 34 (1995) 2252.
4. M. J. Keevers and M. A. Green: J. Appl. Phys. 75 (1994) 4022.
5. H. Kasai and H. Matsumura: Sol. Energy Mater. Sol. Cells 48 (1997) 93.
6. R. Newman: Phy. Rev. 99 (1955) 465.
7. R. A. Messenger and J. S. Blakemore: Phys. Rev. 4 (1971) 1873.
8. H. J. Mason and J. S. Blakemore : J. Appl. Phys. 43 (1972) 2810.
9. W. Schelter, W. Hell, R. Helbig and M. Sculz: J. Phys. C 15 (1982) 5839.
10. G. J. Parker, S. D. Brothertonn, I. Gale and A. Gill: J. Appl. Phys. 54 (1983) 3926.
11. G. Lucovsky: Solid State Commun. 3 (1965) 299.
12. A. H. Edwards and W. B. Fowler: Phys. Rev. 16 (1977) 3613.
13. R. I. Chikovani and Y. E. Pokrovskii: Sov. Phys. Solid State 8 (1967) 1856.
14. D. K. Schroder, R. N. Thomas and J. C. Swartz: IEEE Trans. Electron Devices 25 (1978) 254.
15. G. E. Jellison and F. A. Modine: J. Appl. Phys. 53 (1982) 3745.
16. G. Lubberts and B. C. Burkey: J. Appl. Phys. 55 (1984) 760.
17. A. A. Vol'fson and V. K. Subashiev: Sov. Phys.-Semicond. 1 (1967) 327.
18. M. Balkanski, A. Aziza and E. Amzallag: Phys. Status Solidi 31 (1969) 323.
19. G. E. Jellison, F. A. Modine, C. W. White, R. F. Wood and R. T. Young: Phys. Rev. Lett. 46 (1981) 1414.
20. J. Wagner: Solid State Electron. 28 (1985) 25.
21. G. E. Jellison, S. P. Withrow, J. W. Moccamy, J. D. Budai, D. Lubben and M. J. Godbole: Phys. Rev. 52 (1995) 14607.
22. L. J. Van der Pauw: Phillips Tech. Rev. 13 (1958) 1.
23. S. M. Sze: Semiconductor Devices Physics and Technology (John Wiley & Sons, New York, 1985) Chap. 10.
24. H. M. Hobgood, T. T. Braggins, M. M. Sopira, J. C. Swartz and R. N. Thomas: IEEE Trans. Electron Devices 27 (1980) 14.
25. P. Bergamini, G. Fabri and F. Pandarese: Appl. Phys. Lett. 17 (1970) 18.
26. O. S. Heavens: Optical Properties of Thin Solid Films (Dover, New York, 1991) Chap. 4.
27. M. A. Green and M. J. Keevers: Prog. Photovolt. 3 (1995) 189.
28. W. C. Dash and R. Newman: Phys. Rev. 99 (1955) 1151.
29. G. E. Jelison, Jr. and F. A. Modline: J. Appl. Phys. 53 (1982) 3745.
30. M. J. Keevers and M. A. Green: Sol. Energy Mater. Sol. Cells 41 (1996) 195.