Lateral ordered InGaAs self-organized quantum dots grown on (311) GaAs by conventional molecular beam epitaxy

Chinese Physics Letters

Volumn 16, Issue 1, 1999, Pages 68-70

  Xu, Huai Zhe ^a   Jiang, Wei Hong ^a   Xu, Bo ^a   Zhou, Wei ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

CONVENTIONAL SOLID SOURCES; D SURFACES; D TYPES; DOT FORMATIONS; GAAS SURFACES; MISORIENTATIONS; MOLECULAR-BEAM EPITAXY; SELF-ORGANIZED QUANTUM DOTS; SOLID SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033411884     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/1/024     Document Type: Article

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