Simulation of antimony diffusion in heavily arsenic-doped silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1693-1696

  Uematsu, Masashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Antimony; Arsenic; Impurity diffusion; Silicon; Simulation

Indexed keywords

ANTIMONY; ARSENIC; COMPUTER SIMULATION; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

INTEGRATED DIFFUSION MODEL;

SEMICONDUCTING SILICON;

EID: 0032050440     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1693     Document Type: Article

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