Observation of vacancy enhancement during rapid thermal annealing in nitrogen

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 349-354

  Jacob, M ^a,b   Pichler, P ^a   Ryssel, H ^a,c   Falster, R ^d   Cornara, M ^d   Gambaro, D ^d   Olmo, M ^d   Pagani, M ^d  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b SIEMENS AG   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d MEMC Electronic Materials SpA   (Italy)

Author keywords

Platinum Diffusion; Point Defects; Silicon; Vacancy Generation

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; NITROGEN; POINT DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE; DIFFUSION IN SOLIDS; LOW TEMPERATURE EFFECTS; NITRIDES; NITRIDING; PLATINUM; SEMICONDUCTING SILICON;

AMBIENTS; LOW TEMPERATURES; NITRIDE FILMS; SILICON SURFACES; VACANCY CONCENTRATION; VACANCY ENHANCEMENT; VACANCY GENERATION;

RAPID THERMAL ANNEALING; ANNEALING;

VACANCY ENHANCEMENT;

EID: 16944364183     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.349     Document Type: Article

References (22)

1. M. Okamura, Jpn. J. Appl. Phys. 9, 848 (1970).
2. S. Mizuo, and H. Higuchi, Jpn. J. Appl. Phys. 20, 739 (1981).
3. D. A. Antoniadis, and I. Moskowitz, J. Appl. Phys. 53, 6788 (1982).
4. P. S. Dobson, Phil. Mag. 24, 567 (1971).
5. S. M. Hu, J. Appl. Phys. 45, 1567 (1974).
6. G. R. Booker, and W. J. Tunstall, Phil. Mag. 13, 71 (1966).
7. R. J. Jaccodine, and C. M. Drum, Appl. Phys. Lett. 8, 29 (1966).
8. S. Mizuo, T. Kusaka, A. Shintani, M. Nanba, and H. Higuchi, J. Appl. Phys. 54, 3860 (1983).
9. P. Fahey, R. W. Dutton, and M. Moslehi, Appl. Phys. Lett. 43, 683 (1983).
10. P. Fahey, G. Barbuscia, M. Moslehi, and R. W. Dutton, Appl. Phys. Lett. 46, 784 (1985).
11. T. K. Mogi, M. O. Thompson, H.-J. Gossmann, D. J. Eaglesham, C. S. Rafferty, J. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, Electrochem. Soc. Extended Abstracts 95-1, 473 (1995).
12. S. M. Hu, J. Electrochem. Soc. 113, 693 (1966).
13. R. G. Frieser, J. Electrochem. Soc. 115, 1092 (1968).
14. T. Ito, S. Hijiya, T. Nozaki, H. Arakawa, M. Shinoda, and Y. Fukukawa, J. Electrochem. Soc. 125, 448 (1978).
15. R. V. Giridhar, and K. Rose, Electrochem. Soc. Proc. 83-8: Silicon Nitride Thin Insulating Films ed. by V. J. Kapoor and H. J. Stein, 312 (1983).
16. T. Kook, and R. J. Jacodine, Mat. Res. Soc. Symp. Proc. 36: Impurity Diffusion and Gettering in Semiconductors ed. by R. B. Fair et al., 83 (1985).
17. T. Y. Tan, and B. J. Ginsberg, Appl. Phys. Lett. 42, 448 (1983).
18. H. Zimmermann, and H. Ryssel, Phys. Rev. B 44, 9064 (1991).
19. H. Zimmermann, Appl. Phys. Lett. 59, 3133 (1991).
20. M. Jacob, P. Pichler, H. Ryssel, D. Gambaro, and R. Falster: ESSDERC'95 ed. by H. C. de Graaff and H. van Kranenburg, Gif-sur-Yvette: Edition Frontieres, 203 (1995).
21. M. Jacob, P. Pichler, H. Ryssel, and R. Falster, Accepted for'publication in J. Appl. Phys. 82, (1997).
22. F. C. Frank, and D. Turnbull, Phys. Rev. 104, 617 (1956).