Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques

Thin Solid Films

Volumn 278, Issue 1-2, 1996, Pages 28-31

  Homma, Tetsuya ^a,b  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Corrosion; Dielectric properties; Fluorine; Silicon oxide

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES OF SOLIDS; FILM PREPARATION; FLUORINE; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SILICA; THIN FILMS;

FLUORINATED SILICON OXIDE FILMS; FLUORINATED SPIN ON GLASS (SOG) FILMS; FLUOROTRIALKOXYSILANE VAPOR TREATMENT (FAST); LIQUID PHASE DEPOSITION (LPD); ROOM TEMPERATURE CHEMICAL VAPOR DEPOSITION (RTCVD);

DIELECTRIC FILMS;

EID: 0030145531     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08116-X     Document Type: Article

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