Dielectric constant and stability of fluorine-doped plasma enhanced chemical vapor deposited SiO2 thin films

Journal of the Electrochemical Society

Volumn 143, Issue 6, 1996, Pages 2015-2019

  Lee, Peter W ^a,b   Mizuno, Shinsuke ^a   Verma, Amrita ^a,b   Tran, Huyen ^a   Nguyen, Bang ^a,b  

^a APPLIED MATERIALS INC   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DESORPTION; DIELECTRIC MATERIALS; FLUORINE; FLUOROCARBONS; PERMITTIVITY; REFRACTIVE INDEX; SILICA; SPECTROSCOPY; STABILITY;

BUFFERED OXIDE ETCH; INTERMETAL DIELECTRIC; PARASITIC CAPACITANCE; THERMAL DESORPTION SPECTROSCOPY;

THIN FILMS;

EID: 0030168301     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836941     Document Type: Article

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