Modeling short channel effect on high-k and stacked-gate MOSFETs

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 2089-2091

  Zhang, J ^a   Yuan, J S ^a   Ma, Y ^b  

^a University of Central Florida   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

DEEP SUBMICRONS; GATE DIELECTRICS; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0034320816     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00152-0     Document Type: Article

References (10)

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