Growth of strained Si/Si1-yCy/Si1-xGex structures by MBE

Vacuum

Volumn 49, Issue 3, 1998, Pages 185-188

  Joelsson, Kenneth B ^a   Ni, Wei Xin ^a   Pozina, Galia ^a   Hultman, Lars ^a   Hansson, Göran V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HIGH GROWTH RATE; LOW SUBSTRATE TEMPERATURE; STRAINED STRUCTURE; SURFACE ROUGHENING;

MOLECULAR BEAM EPITAXY;

EID: 0032010459     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(97)00176-0     Document Type: Article

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