Transferred-Substrate InP-Based Heterostructure Barrier Varactor Diodes on Quartz

IEEE Microwave and Guided Wave Letters

Volumn 10, Issue 11, 2000, Pages 472-474

  Arscott, S ^a   David, T ^a   Melique X ^a   Mounaix, P ^a   Vanbesien O ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Heterojunction barrier varactor diode; InP based materials; substrate transfer; Terahertz frequency

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; QUARTZ; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL NOISE MEASUREMENT; SUBSTRATES; VARACTORS;

HETEROSTRUCTURE BARRIER VARACTOR DIODES; TERAHERTZ FREQUENCY; TRANSFER SUBSTRATE TECHNIQUE;

HETEROJUNCTIONS;

EID: 0034313902     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.888836     Document Type: Article

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