12% efficiency and 9.5 DBm output power from INP-based heterostructure barrier varactor triplers at 250 GHZ

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1999, Pages 123-126

  Melique, X ^a   Maestrini, A ^a   Lheurette, E ^a   Mounaix, P ^a   Favreau, M ^a   Vanbesien, O ^a   Goutoule, M ^a   Beaudin, G ^a   Nahri, T ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; HARMONIC GENERATION; HETEROJUNCTIONS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE; VARACTORS;

CAPACITANCE VOLTAGE CHARACTERISTICS; HARMONIC MULTIPLICATION; OUTPUT POWER; VARACTOR TRIPLERS;

FREQUENCY MULTIPLYING CIRCUITS;

EID: 0033361949     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)