Substrate transfer process for InP-based heterostructure barrier varactor devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 150-155

  Arscott, S ^a   Mounaix, P ^a   Lippens, D ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTORESISTS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

HETEROSTRUCTURE BARRIER VARACTOR (HBV) DEVICES;

VARACTORS;

EID: 0033725632     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591167     Document Type: Article

References (14)

1. E. L. Kollberg and A. Rydberg, Electron. Lett. 25, 1696 (1989).
2. X. Mélique, A. Maestrini, M. Faureau, O. Vanbésien, J. M. Goutoule, G. Beaudin, T. Nahri, and D. Lippens, Electron. Lett. 35, 938 (1999).
3. I. Medhi et al., IEEE Trans. Microwave Theory Tech. 46, 2036 (1998).
4. R. Basco, A. Prabhu, S. Yngvesson, and K. M. Lau, IEEE Trans. Electron Devices 44, 11 (1997).
5. E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, Appl. Phys. Lett. 51, 2222 (1987).
6. D. Mensa, Q. Lee, J. Guthrie, S. Jagnathan, and M. J. W. Rodwell, Electron. Lett. 35, 605 (1999).
7. H. Lorenz, M. Despont, and P. Renaud, Sens. Actuators A 64, 33 (1998).
8. S. Arscott, F. Carat, P. Mounaix, L. Duvillaret, J.-L. Coutaz, and D. Lippens, Electron. Lett. 35, 243 (1999).
9. A. Rahal, E. Boch, C. Rogers, J. Ovey, and R. G. Bosisio, Electron. Lett. 31, 2022 (1995).
10. M. Tong, K. Nmumila, A. A. Ketterson, and I. Adesida, J. Electrochem. Soc. 1, L91 (1992).
11. E. Lheurette, P. Mounaix, F. Salzenstein, F. Mollot, and D. Lippens, Electron. Lett. 32, 1417 (1996).
12. X. Mélique, J. Carbonell, R. Havart, P. Mounaix, O. Vanbésien, and D. Lippens, IEEE Microwave Guid. Wave Lett. 8, 254 (1998).
13. B. B. Van Iperen and H. Tjassens, Proc. IEEE 1032 (1971).
14. E. Kollberg, IEEE Trans. Microwave Theory Tech. 40, 831 (1992).