Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler

Electronics Letters

Volumn 35, Issue 11, 1999, Pages 938-939

  Melique X ^a   Maestrini, A ^b   Mounaix, P ^a   Favreau, M ^c   Vanbesien O ^a   Goutoule, J M ^c   Beaudin, G ^b   Nahri T ^d   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b OBSERVATOIRE DE PARIS   (France)

^c AIRBUS DEFENCE AND SPACE   (Germany)

^d EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

BARRIER VARACTOR TRIPLERS;

VARACTORS;

EID: 0041172212     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990626     Document Type: Article

References (4)

1. STAKE, J., DILLNER, L., JONES, S.H., MANN, C.M., THORNTON, J., JONES, J.R., BISHOP, W.L., and KOLLBERG, E.: 'Effects of self heating on planar heterostructure barrier varactor diodes', IEEE Trans. Electron Devices, 1998, 45, (11), pp. 2298-2303
2. -5 mW and 5% efficiency 216 GHz InP-based heterostructure barrier varactor tripler', IEEE Microw. Guid. Wave Lett., 1998, 8, (11), pp. 384-386
3. RAHAL, A., BOCH, E., ROGERS, C., OVEY, J., and BOSISIO, R.G.: 'Planar multistack quantum barrier varactor tripler evaluation at W-band', Electron. Lett., 1995, 31, (23), pp. 2022-2023
4. MELIQUE, X., CARBONELL, J., HAVART, R., MOUNAIX, P., VANBESIEN, O., and LIPPENS. D.: 'InGaAs/InAlAs/AlAs heterostructure barrier varactor for harmonic multiplication', IEEE Microw. Guid. Wave Lett., 1998, 8, (7), pp. 254-256