Transferred InP-based HBVs on glass substrate

Electronics Letters

Volumn 35, Issue 17, 1999, Pages 1493-1494

  Arscott, S ^a   Mounaix, P ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PHOTORESISTS; SEMICONDUCTING GLASS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; DUAL HETEROSTRUCTURE BARRIER VARACTORS (DHBV); EPITAXIAL LAYER TRANSFER METHOD; GLASS SUBSTRATES;

VARACTORS;

EID: 0032648369     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990984     Document Type: Article

References (6)

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