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Volumn 166, Issue 1, 2000, Pages 290-294
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Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross-sectional Atomic Force Microscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
COMPRESSIVE STRESS;
DEFORMATION;
FINITE ELEMENT METHOD;
INTERFACES (MATERIALS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OXIDATION;
RELAXATION PROCESSES;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
STRAIN;
SUBSTRATES;
CROSS-SECTIONAL ATOMIC FORCE MICROSCOPY;
V-GROOVED SUBSTRATES;
SEMICONDUCTOR QUANTUM WIRES;
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EID: 0034301320
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(00)00410-4 Document Type: Article |
Times cited : (10)
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References (16)
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