A critical thickness condition for triangular strained quantum wires grown in V-grooves on a patterned substrate

Acta Materialia

Volumn 44, Issue 1, 1996, Pages 1-13

  Gosling, T J ^a   Freund, L B ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; SUBSTRATES;

CRITICAL THICKNESS; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0029779431     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/1359-6454(95)00173-X     Document Type: Article

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