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Gustafsson, A.1
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7
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3843050112
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Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Semiconductor Substrates
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eds., K. Eberl, P.M. Petroff and P. Demeester, Dordrecht, The Netherlands: Kluwer Academic Publishers
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E. Kapon, G. Biasiol, D.M. Hwang and E. Colas, Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Semiconductor Substrates, eds., K. Eberl, P.M. Petroff and P. Demeester, NATO ASI Series E, Applied Sciences, 298 (Dordrecht, The Netherlands: Kluwer Academic Publishers, 1995), p. 291.
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9
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-
3843053404
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-
note
-
The angle of the {311}A facets delimiting the upper QWR interface appears to change at high GaAs thicknesses. This could be due to the development of facets vicinal to {311}A, but could also be an artifact due to the increase of height modulation on these surfaces along the QWR axis (see below), resulting in an apparent change of slope in the TEM images, due to the tilt of the images with respect to the axis.
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-
-
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10
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0344194825
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J.S. Smith, P.L. Derry, S. Margalit and A. Yariv, Appl. Phys. Lett. 47, 712 (1985).
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11
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0030687217
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F. Reinhardt, B. Dwir, G. Biasiol and E. Kapon, J. Cryst. Growth 170, 689 (1997).
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Reinhardt, F.1
Dwir, B.2
Biasiol, G.3
Kapon, E.4
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12
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-
3843087186
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-
to be published
-
F. Reinhardt et al. (to be published).
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-
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Reinhardt, F.1
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13
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3843058914
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-
note
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{311}A and 10.4 ± 2.0 nm for d.
-
-
-
-
14
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84876791937
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in press, 9/29/97
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G. Biasiol, F. Reinhardt, A. Gustafsson and E. Kapon, Appl. Phys. Lett., in press, 9/29/97.
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Appl. Phys. Lett.
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16
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0029723523
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E. Kapon, G. Biasiol, D. M. Hwang, M. Walther and E. Colas, Sol. St. Electron. 40, 815 (1996).
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Kapon, E.1
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17
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36449007260
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M. Walther, E. Kapon, C. Caneau, D.M. Hwang and L.M. Schiavone, Appl. Phys. Lett. 62, 2170 (1993).
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Caneau, C.3
Hwang, D.M.4
Schiavone, L.M.5
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18
-
-
3843142647
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-
accepted
-
E. Martinet, A. Gustafsson, G. Biasiol, F. Reinhardt, E. Kapon and K. Leifer, Phys. Rev. B (accepted).
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Phys. Rev. B
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Martinet, E.1
Gustafsson, A.2
Biasiol, G.3
Reinhardt, F.4
Kapon, E.5
Leifer, K.6
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