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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1081-1084

Tailoring of energy levels in strain-induced quantum dots

(3) Ahopelto, Jouni a Sopanen, Markku b Lipsanen, Harri b

a VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

b AALTO UNIVERSITY (Finland)

Author keywords

InP islands; Photoluminescence; Quantum dots; Self organizing growth; Stressors

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; STRAIN RATE; TRANSMISSION ELECTRON MICROSCOPY;

EXCITED STATE TRANSITION; PHOTOLUMINESCENCE SPECTRA; SELF ORGANIZING GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032631775 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1081 Document Type: Article

Times cited : (9)

References (9)

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