Etch rates of (100), (111) and (110) single-crystal silicon in TMAH measured in situ by laser reflectance interferometry

Sensors and Actuators, A: Physical

Volumn 86, Issue 1-2, 2000, Pages 73-80

  Steinsland, Elin ^a   Finstad, Terje ^a   Hanneborg, Anders ^b  

^a UNIVERSITY OF OSLO   (Norway)

^b SINTEF   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMMONIUM COMPOUNDS; CRYSTAL ORIENTATION; ETCHING; IN SITU PROCESSING; INTERFEROMETRY; SEMICONDUCTING SILICON;

LASER REFLECTANCE INTERFEROMETRY;

SINGLE CRYSTALS;

EID: 0034297460     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00309-5     Document Type: Article

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