Influence of nitrogen incorporation on the electrical properties of MPCVD diamond films growth in CH4-CO2-N2 and CH4-H2-N2 gas mixtures

Thin Solid Films

Volumn 374, Issue 1, 2000, Pages 27-33

  Elmazria, O ^a   Bougdira, J ^a   Chatei, H ^b   De Pouques, L ^a   Remy, M ^a   Alnot, P ^a  

^a Lab Phys Milieux Ionises A   (France)

^b FACULTÉ DES SCIENCES   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HETEROJUNCTIONS; NITROGEN; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY;

ARRHENIUS PLOTS; CATHODOLUMINESCENCE SPECTROSCOPY; MICROWAVEL PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0034291501     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01074-9     Document Type: Article

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