Cathodoluminescence of diamond films grown on pretreated Si (001) substrates by microwave plasma chemical vapour deposition

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 712-716

  Kim, Do Geun ^a,b   Seong, Tae Yeon ^a   Baik, Young Joon ^b   Stevens Kalceff, M A ^c   Phillips, M R ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

Cathodoluminescence; Defects; Diamond films; Impurities

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; FILM GROWTH; GRAIN BOUNDARIES; MICROWAVES; PLASMA APPLICATIONS; SILICON WAFERS;

GROWTH FACETS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD);

DIAMOND FILMS;

EID: 0032620586     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00279-9     Document Type: Article

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