Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 3367-3373

  Stoica, T ^a   Vescan, L ^b   Goryll, M ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000436854     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367104     Document Type: Article

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