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Volumn 74, Issue 1, 1999, Pages 109-112

Single step electrochemical etching in ammonium fluoride

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT DENSITY; ETCHING; MICROMACHINING; MORPHOLOGY; OPTIMIZATION; POROUS SILICON; SINGLE CRYSTALS; SURFACES;

EID: 0032633051     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00334-3     Document Type: Article
Times cited : (11)

References (12)
  • 1
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    • Uhlir, A.1
  • 2
    • 84975353142 scopus 로고
    • Electropolishing silicon in HF acid solutions
    • Turner D.R. Electropolishing silicon in HF acid solutions. J. Electrochem. Soc. 105:1958;402-408.
    • (1958) J. Electrochem. Soc. , vol.105 , pp. 402-408
    • Turner, D.R.1
  • 3
    • 33644910106 scopus 로고
    • Porous silicon formation mechanisms
    • Smith R.L., Collins S.D. Porous silicon formation mechanisms. J. Appl. Phys. 71(8):1992;R1-R22.
    • (1992) J. Appl. Phys. , vol.71 , Issue.8
    • Smith, R.L.1    Collins, S.D.2
  • 5
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • Canham L.T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57:1990;1046-1048.
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 1046-1048
    • Canham, L.T.1
  • 6
    • 0029753175 scopus 로고    scopus 로고
    • Porous silicon - A new material for MEMS
    • San Diego, USA
    • V. Lehmann, Porous silicon - a new material for MEMS, IEEE MEMS Workshop '96, San Diego, USA, pp. 1-6, 1996.
    • (1996) IEEE MEMS Workshop '96 , pp. 1-6
    • Lehmann, V.1
  • 7
    • 0029732934 scopus 로고    scopus 로고
    • Processing of three-dimensional microstructures using macroporous n-type silicon
    • Ottow S., Lehmann V., Foll H. Processing of three-dimensional microstructures using macroporous n-type silicon. J. Electrochem. Soc. 143:1996;385-390.
    • (1996) J. Electrochem. Soc. , vol.143 , pp. 385-390
    • Ottow, S.1    Lehmann, V.2    Foll, H.3
  • 9
    • 0031653882 scopus 로고    scopus 로고
    • Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid
    • Heidelberg, Germany
    • H. Ohji, P.J. Trimp, P.J. French, Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid, IEEE MEMS Workshop '98, Heidelberg, Germany, pp. 246-250, 1998.
    • (1998) IEEE MEMS Workshop '98 , pp. 246-250
    • Ohji, H.1    Trimp, P.J.2    French, P.J.3
  • 10
    • 0025386899 scopus 로고
    • Formation mechanism and properties of electrochemically etched trenches in n-type silicon
    • Lehmann V., Foll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc. 137:1990;653-659.
    • (1990) J. Electrochem. Soc. , vol.137 , pp. 653-659
    • Lehmann, V.1    Foll, H.2
  • 11
    • 1842595981 scopus 로고
    • Porous silicon formation: A quantum wire effect
    • Lehmann V., Gosele A. Porous silicon formation: a quantum wire effect. Appl. Phys. Lett. 58:1991;856-858.
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 856-858
    • Lehmann, V.1    Gosele, A.2
  • 12
    • 0027677480 scopus 로고
    • The physics of macropore formation in low doped n-type silicon
    • Lehmann V. The physics of macropore formation in low doped n-type silicon. J. Electrochem. Soc. 140:1993;2836-2843.
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 2836-2843
    • Lehmann, V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.