-
1
-
-
84885757292
-
Electrolytic shaping of germanium and silicon
-
Uhlir A. Electrolytic shaping of germanium and silicon. Bell Tech. J. 35:1956;333-347.
-
(1956)
Bell Tech. J.
, vol.35
, pp. 333-347
-
-
Uhlir, A.1
-
2
-
-
84975353142
-
Electropolishing silicon in HF acid solutions
-
Turner D.R. Electropolishing silicon in HF acid solutions. J. Electrochem. Soc. 105:1958;402-408.
-
(1958)
J. Electrochem. Soc.
, vol.105
, pp. 402-408
-
-
Turner, D.R.1
-
3
-
-
33644910106
-
Porous silicon formation mechanisms
-
Smith R.L., Collins S.D. Porous silicon formation mechanisms. J. Appl. Phys. 71(8):1992;R1-R22.
-
(1992)
J. Appl. Phys.
, vol.71
, Issue.8
-
-
Smith, R.L.1
Collins, S.D.2
-
5
-
-
0141775174
-
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
-
Canham L.T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57:1990;1046-1048.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 1046-1048
-
-
Canham, L.T.1
-
6
-
-
0029753175
-
Porous silicon - A new material for MEMS
-
San Diego, USA
-
V. Lehmann, Porous silicon - a new material for MEMS, IEEE MEMS Workshop '96, San Diego, USA, pp. 1-6, 1996.
-
(1996)
IEEE MEMS Workshop '96
, pp. 1-6
-
-
Lehmann, V.1
-
7
-
-
0029732934
-
Processing of three-dimensional microstructures using macroporous n-type silicon
-
Ottow S., Lehmann V., Foll H. Processing of three-dimensional microstructures using macroporous n-type silicon. J. Electrochem. Soc. 143:1996;385-390.
-
(1996)
J. Electrochem. Soc.
, vol.143
, pp. 385-390
-
-
Ottow, S.1
Lehmann, V.2
Foll, H.3
-
8
-
-
34247566940
-
Macro porous silicon formation for micromachining
-
Austin, TX, USA, September
-
H. Ohji, S. Lahteenmaki, P.J. French, Macro porous silicon formation for micromachining, Proceedings SPIE, Micromachining and Microfabrication Process Technology III, Austin, TX, USA, September 1997, pp. 189-197.
-
(1997)
Proceedings SPIE, Micromachining and Microfabrication Process Technology III
, pp. 189-197
-
-
Ohji, H.1
Lahteenmaki, S.2
French, P.J.3
-
9
-
-
0031653882
-
Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid
-
Heidelberg, Germany
-
H. Ohji, P.J. Trimp, P.J. French, Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid, IEEE MEMS Workshop '98, Heidelberg, Germany, pp. 246-250, 1998.
-
(1998)
IEEE MEMS Workshop '98
, pp. 246-250
-
-
Ohji, H.1
Trimp, P.J.2
French, P.J.3
-
10
-
-
0025386899
-
Formation mechanism and properties of electrochemically etched trenches in n-type silicon
-
Lehmann V., Foll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc. 137:1990;653-659.
-
(1990)
J. Electrochem. Soc.
, vol.137
, pp. 653-659
-
-
Lehmann, V.1
Foll, H.2
-
11
-
-
1842595981
-
Porous silicon formation: A quantum wire effect
-
Lehmann V., Gosele A. Porous silicon formation: a quantum wire effect. Appl. Phys. Lett. 58:1991;856-858.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 856-858
-
-
Lehmann, V.1
Gosele, A.2
-
12
-
-
0027677480
-
The physics of macropore formation in low doped n-type silicon
-
Lehmann V. The physics of macropore formation in low doped n-type silicon. J. Electrochem. Soc. 140:1993;2836-2843.
-
(1993)
J. Electrochem. Soc.
, vol.140
, pp. 2836-2843
-
-
Lehmann, V.1
|