Effect of substrates on morphological evolution of a film in the silicon CVD process: Approach by charged cluster model

Journal of Crystal Growth

Volumn 218, Issue 1, 2000, Pages 27-32

  Cheong, Woo S ^a   Yoon, Duk Y ^a   Kim, Doh Y ^b   Hwang, Nong M ^b,c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Seoul National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; FILM GROWTH; FLOCCULATION; MATHEMATICAL MODELS; MORPHOLOGY; POROUS MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

CHARGED CLUSTERS;

SEMICONDUCTING FILMS;

EID: 0034274105     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00542-X     Document Type: Article

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