Depth effect of the morphology change induced by hydrogen annealing of grown-in defects in silicon

Journal of the Electrochemical Society

Volumn 147, Issue 9, 2000, Pages 3508-3511

  Fujimori, Hiroyuki ^a,b,d   Matsushita, Hiroshi ^b   Oose, Ichihiro ^b   Okabe, Toshio ^c  

^a Nissei Bldg   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF TOYAMA   (Japan)

^d ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH-IN DEFECTS;

ANNEALING; ARSENIC; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH; ETCHING; HYDROGEN; MORPHOLOGY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0034273784     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393928     Document Type: Article

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