Structural characterization of SiC crystals grown by physical vapor transport

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 433-436

  Sanchez, E K ^a   Heydemann, V D ^a   Rohrer, G S ^a   Skowronski, M ^a   Solomon, J ^b   Capano, M A ^c   Mitchel, W C ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UDRI   (United States)

^c WRIGHT PATTERSON AIR FORCE BASE   (United States)

Author keywords

Dislocations; Extended Defects; Inclusions; Silicon Carbide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; INCLUSIONS; SILICON CARBIDE; X RAY CRYSTALLOGRAPHY;

NOMARSKI CONTRAST OPTICAL MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743130699     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.433     Document Type: Article

References (9)

1. R. F. Davis, G. Kelner, M. Shur, J. W. Palmour and J. A. Edmond, IEEE Proc. 79, 677 (1991).
2. H. Morkoc, S. Strite, G.B. Gao, M.F. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76, 1363 (1994).
3. R.A. Stein, Physica B 185, 211 (1993).
4. R. C. Glass, L. O. Kjellberg, V. F. Tsvetskov, J. E. Sundgren and E. Janzen, J. Crystal Growth 132, 504 (1993).
5. M. Tuominen, R. Yakimova, R. C. Glass, T. Tuomi and E. Janzen, J. Crystal Growth 144, 267 (1994).
6. M. Dudley, S. Wang, W. Huang, C. H. Carter, V. T. Tsvetskov and C. Fazi, J. Phys. D: Appl. Phys. 28, A63 (1995).
7. H. M. Hobgood, D. L. Barrett, J. P. McHugh, R. C. Clarke, S. Sriram, A.A. Burk, J. Greggi, C. D. Brandt, R. H. Hopkins and W. J. Choyke, J. Crystal Growth 137, 181 (1994).
8. J. A. Powell, P. G. Neudeck, D. J. Larkin, J. W. Yang and P. Pirouz, Inst. Phys. Conf. Ser. 137, 161 (1994).
9. J. T. Grant and T. W. Haas, Phys. Lett. 33A, 386 (1970).