Strain effect on the band structure of InAs/GaAs quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6264-6265

  Zhu, Haijun ^a   Feng, Songlin ^a   Jlang, Desheng ^a   Deng, Yuanming ^a   Wang, Hailong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ETCHING; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; STRESS RELAXATION;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033331308     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6264     Document Type: Article

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