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Volumn 12, Issue 3, 2000, Pages 287-289

Fabrication of 2×2 crosspoint switches using a sputtered SiO2 intermixing technique

Author keywords

[No Author keywords available]

Indexed keywords

INSERTION LOSSES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SWITCHES; SILICA;

EID: 0033893692     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.826916     Document Type: Article
Times cited : (10)

References (4)
  • 2
    • 0030241811 scopus 로고    scopus 로고
    • Novel approach for simple fabrication of high-performance InP-switch matrix based on laser-amplifier gates
    • F. Dorgeuille, B. Mersali, M. Feuillade, S. Sainson, S. Slempkes, and M. Foucher, "Novel approach for simple fabrication of high-performance InP-switch matrix based on laser-amplifier gates," IEEE Photon. Technol. Lett., vol. 8, pp. 1178-1180, 1996.
    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 1178-1180
    • Dorgeuille, F.1    Mersali, B.2    Feuillade, M.3    Sainson, S.4    Slempkes, S.5    Foucher, M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.